| Citation: |
Song Jianjun, Zhang Heming, Shu Bin, Hu Huiyong, Dai Xianying. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. Journal of Semiconductors, 2008, 29(3): 442-446.
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Song J J, Zhang H M, Shu B, Hu H Y, Dai X Y. The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si[J]. J. Semicond., 2008, 29(3): 442.
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The KP Dispersion Relation Near the Δi Valley in Strained Si1-xGex/Si
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Abstract
Based on an analysis of symmetry,the dispersion relations near the Δi valley in strained Si1-xGex(0≤x＜0.45)/(001),(111),(101)Si are derived using the KP method with perturbation theory.These relations demonstrate that Δi levels in strained Si1-xGex are different from the Δ1 level in relaxed Si1-xGex,while the longitudinal and transverse masses (m*l and m*t) are unchanged under strain.The energy shift between the Δi levels and the Δ1 level follows the linear deformation potential theory.Finally,a description of the conduction band (CB) edge in biaxially strained layers is given.-
Keywords:
- KP method,
- conduction band,
- strained SiGe
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References
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Proportional views
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