Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 507-510
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6H-SiC高反压台面pn结二极管

王姝睿 , 刘忠立 , 李晋闽 , 王良臣 and 徐萍

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Key words: 碳化硅, pn结二极管, 6H-SiC

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 507-510
      王姝睿, 刘忠立, 李晋闽, 王良臣, 徐萍. 6H-SiC高反压台面pn结二极管[J]. 半导体学报(英文版), 2001, 22(4): 507-510.
      Citation:
      王姝睿, 刘忠立, 李晋闽, 王良臣, 徐萍. 6H-SiC高反压台面pn结二极管[J]. 半导体学报(英文版), 2001, 22(4): 507-510.
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      • Received Date: 2015-08-20

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