Chin. J. Semicond. > 2001, Volume 22 > Issue 4 > 503-506
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新型GaAs/AlGaAs量子阱红外探测器暗电流特性

史衍丽 , 邓军 , 杜金玉 , 廉鹏 , 高国 , 陈建新 , 沈光地 , 尹洁 and 吴兴惠

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Key words: 新型GaAs/AlGaAs量子阱红外探测器, 暗电流特性分析

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(4): 503-506
      史衍丽, 邓军, 杜金玉, 廉鹏, 高国, 陈建新, 沈光地, 尹洁, 吴兴惠. 新型GaAs/AlGaAs量子阱红外探测器暗电流特性[J]. 半导体学报(英文版), 2001, 22(4): 503-506.
      Citation:
      史衍丽, 邓军, 杜金玉, 廉鹏, 高国, 陈建新, 沈光地, 尹洁, 吴兴惠. 新型GaAs/AlGaAs量子阱红外探测器暗电流特性[J]. 半导体学报(英文版), 2001, 22(4): 503-506.
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      • Received Date: 2015-08-20

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