Chin. J. Semicond. > 1997, Volume 18 > Issue 2 > 103-107
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Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果

秦华 , 陈坤基 , 黄信凡 and 李伟

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1997

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      Article Navigation >  Journal of Semiconductors  > 1997  >  18(2): 103-107
      秦华, 陈坤基, 黄信凡, 李伟. Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果[J]. 半导体学报(英文版), 1997, 18(2): 103-107.
      Citation:
      秦华, 陈坤基, 黄信凡, 李伟. Triode PECVD氢稀释制备的nc-Si:H薄膜的新结果[J]. 半导体学报(英文版), 1997, 18(2): 103-107.
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      • Received Date: 2015-08-19

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