Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1123-1127
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Si/SiGe-OI应变异质结构的高分辨电子显微分析

马通达 , 屠海令 , 邵贝羚 , 陈长春 and 黄文韬

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Key words: Si/SiGe-OI应变异质结构, 高分辨显微结构, 失配位错, 弛豫机理

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    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1123-1127
      马通达, 屠海令, 邵贝羚, 陈长春, 黄文韬. Si/SiGe-OI应变异质结构的高分辨电子显微分析[J]. 半导体学报(英文版), 2004, 25(9): 1123-1127.
      Citation:
      马通达, 屠海令, 邵贝羚, 陈长春, 黄文韬. Si/SiGe-OI应变异质结构的高分辨电子显微分析[J]. 半导体学报(英文版), 2004, 25(9): 1123-1127.
      shu

      • Received Date: 2015-08-19

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