李卓远, 吴为民, 洪先龙, 顾钧. 一种新的标准单元增量式布局算法(英文)[J]. 半导体学报(英文版), 2002, 23(12): 1338-1344.
| Citation: |
Guo Lunchun, Wang Xiaoliang, Hu Guoxin, Li Jianping, Luo Weijun. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Journal of Semiconductors, 2007, 28(S1): 234-237.
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Guo L C, Wang X L, Hu G X, Li J P, Luo W J. Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer[J]. Chin. J. Semicond., 2007, 28(S1): 234.
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Growth of GaN on Si(1 l 1) by Inserting 5AI/AIN Buffer Layer
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Abstract
GaN films with and without a Al/AIN buffer layers are grown on Si(111) substrate via metalorganic chemical vapor deposition (MOCVD)，respectively.The films are characterized by optical microscopy( OM)，X-ray diffraction rocking curve (XRDRC)，and Raman scattering(RS). OM shows that the GaN film inserting with 8Al/AlN buffer layers has less cracks than film without any δAl/AIN buffer layers.XRDRC demonstrates good quality of the GaN film with δAl/AIN buffer layers and Raman scattering analyses reveal that it is an effective way to overcome the difficulties of growing GaN on Si(111)sub. strate by inserting δAl/AIN buffer layers.-
Keywords:
- GaN,
- MOCVD,
- AlN,
- buffer layers
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References
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Proportional views
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