Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 238-240
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Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers

Yu Guanghui, Lei Benliang, Meng Sheng, Wang Xinzhong, Lin Chaotong and Qi Ming

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Abstract: Thick GaN films are grown by hydride vapor phase epitaxy with low temperature AIN interlayers(LT·AlN). Influence of annealing time of LT-AlN on the crystalline quality of GaN films is studied.Surface morphology of LT-AlN layers changes after annealing.Crystalline quality can be improved with a suitable LT-AlN annealing time.

Key words: GaN, hydride vapor phase epitaxy, low temperature AIN interlayer

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 238-240
      Yu Guanghui, Lei Benliang, Meng Sheng, Wang Xinzhong, Lin Chaotong, Qi Ming. Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers[J]. Journal of Semiconductors, 2007, 28(S1): 238-240. ****Yu G H, Lei B L, Meng S, Wang X Z, Lin C T, Qi M. Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers[J]. Chin. J. Semicond., 2007, 28(S1): 238.
      Citation:
      Yu Guanghui, Lei Benliang, Meng Sheng, Wang Xinzhong, Lin Chaotong, Qi Ming. Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers[J]. Journal of Semiconductors, 2007, 28(S1): 238-240. ****
      Yu G H, Lei B L, Meng S, Wang X Z, Lin C T, Qi M. Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers[J]. Chin. J. Semicond., 2007, 28(S1): 238.
      shu

      Hydride Vapor Phase Epitaxy of Thick GaN with Low Temperature AIN Interlayers

      • State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China,State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China and State Key Laboratory of Functional Materials for lnformatics，Shanghi Institute of Microsystem and Information Technology，Shanghai 200050，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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