| Citation: |
Peng Dongsheng, Feng Yuchun, Niu Hanben. High Quality GaN Films Growth on Pre-Treated Sapphire Substrate[J]. Journal of Semiconductors, 2007, 28(S1): 241-244.
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Peng D S, Feng Y C, Niu H B. High Quality GaN Films Growth on Pre-Treated Sapphire Substrate[J]. Chin. J. Semicond., 2007, 28(S1): 241.
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High Quality GaN Films Growth on Pre-Treated Sapphire Substrate
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Abstract
Etch pits on sapphire substrate surface are formed after surface treating.GaN films have been grown by LP-MOCVD on the sapphire substrate，a half of which are treated by chemical etch.The crystal quality and optical quality of GaN films are analyzed by high.resolution double crystal X-ray diffraction(DCXRD)and optical transmission measurement. Results indicate that the crystal quality of GaN determined by transmission measurement is in agreement with that determined by DCXRD.that the crystal quality and optical quality of GaN films are enhanced by pre-treating sapphire substrate' and that the(0002)plane and(1012)plane full-width at half-maximum by DCXRD of GaN films grown on pre·treated sapphire substrate are as low as 208.80" and 320.76"，respectively.-
Keywords:
- ：pre-treated,
- MOCVD,
- GaN film
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References
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Proportional views
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