Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 188-192
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基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型

杨林安 , 张义门 and 张玉明

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Key words: 4H-SiC, 射频功率MESFET, 非线性大信号模型, 电容模型

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 188-192
      杨林安, 张义门, 张玉明. 基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型[J]. 半导体学报(英文版), 2002, 23(2): 188-192.
      Citation:
      杨林安, 张义门, 张玉明. 基于实验与物理分析的4H-SiC射频功率MESFET大信号非线性精确电容模型[J]. 半导体学报(英文版), 2002, 23(2): 188-192.
      shu

      • Received Date: 2015-08-19

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