| Citation: |
Wang Tongxiang, Pan Hongshu, Li Liang. Microwave Power-Tested Technology of SiC MESFET[J]. Journal of Semiconductors, 2006, 27(S1): 239-241.
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Wang T X, Pan H S, Li L. Microwave Power-Tested Technology of SiC MESFET[J]. Chin. J. Semicond., 2006, 27(13): 239.
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Microwave Power-Tested Technology of SiC MESFET
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Abstract
The microwave testing system of SiC MESFET is analyzed.For the device based on the third era semiconductor,the microwave testing system of SiC MESFET is established associating to the testing technology of Si and GaAs MESFET.The test of watt level power output is accomplished under the working frequency of 2GHz.The result is that the power gain is greater than 6dB,the fT is 6.7GHz,and fmax achieves 25GHz.-
Keywords:
- microwave power,
- testing,
- SiC MESFET,
- output power
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References
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Proportional views
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