Chin. J. Semicond. > 2003, Volume 24 > Issue 11 > 1130-1134
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不同AlGaN层厚度的AlGaN/GaN高电子迁移率晶体管的静态特性(英文)

吴桐 , 郝智彪 , 唐广 , 郭文平 , 胡卉 , 孙长征 and 罗毅

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Key words: 高电子迁移率晶体管, 氮化镓, 功率器件

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    Received: 20 August 2015 Revised: Online: Published: 01 November 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(11): 1130-1134
      吴桐, 郝智彪, 唐广, 郭文平, 胡卉, 孙长征, 罗毅. 不同AlGaN层厚度的AlGaN/GaN高电子迁移率晶体管的静态特性(英文)[J]. 半导体学报(英文版), 2003, 24(11): 1130-1134.
      Citation:
      吴桐, 郝智彪, 唐广, 郭文平, 胡卉, 孙长征, 罗毅. 不同AlGaN层厚度的AlGaN/GaN高电子迁移率晶体管的静态特性(英文)[J]. 半导体学报(英文版), 2003, 24(11): 1130-1134.
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      • Received Date: 2015-08-20

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