LETTERS
Huang Hua, Zhang Haiying, Yang Hao, Yin Junjian, Zhu Min and Ye Tianchun
Abstract: A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology.The on-chip matched amplifier employs lumped elements to reduce the circuit size,and shows a 50Ω noise figure less than 0.9dB,gain greater than 26dB,and return loss less than -10dB in the S-C band range of 3.5 to 4.3GHz.The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range.It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.
Key words: low noise amplifier, enhancement PHEMT, MMIC
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Article views: 3849 Times PDF downloads: 1774 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 27 July 2006 Online: Published: 01 December 2006
| Citation: |
Huang Hua, Zhang Haiying, Yang Hao, Yin Junjian, Zhu Min, Ye Tianchun. A Super-Low-Noise,High-Gain MMIC LNA[J]. Journal of Semiconductors, 2006, 27(12): 2080-2084.
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Huang H, Zhang H Y, Yang H, Yin J J, Zhu M, Ye T C. A Super-Low-Noise,High-Gain MMIC LNA[J]. Chin. J. Semicond., 2006, 27(12): 2080.
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