| Citation: |
Chen Yanhu, Shen Huajun, Wang Xiantai, Ge Ji, Li Bin, Liu Xinyu, Wu Dexin. GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network[J]. Journal of Semiconductors, 2006, 27(12): 2075-2079.
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Chen Y H, Shen H J, Wang X T, Ge J, Li B, Liu X Y, Wu D X. GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network[J]. Chin. J. Semicond., 2006, 27(12): 2075.
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GaAs HBT Microwave Power Transistor with On-Chip Stabilization Network
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Abstract
An InGaP/GaAs HBT microwave power transistor with on-chip parallel RC stabilization network is developed with a standard GaAs MMIC process.From the stability factor K,the device shows unconditional stability in a wide frequency range due to the RC network.The power characteristics of the device as measured by a load-pull system show that the large-signal performance of the power transistor is affected slightly by the RC network.Psat is 30dBm at 5.4GHz,and P1dB is larger than 21.6dBm at 11GHz.The stability of the device due to RC network is proved by a power combination circuit.This makes the power transistor very suitable for applications in microwave high power HBT amplifiers.-
Keywords:
- HBT,
- microwave power transistor,
- stability
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References
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Proportional views
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