Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 515-519
|

CONTENTS

高质量栅氧化层的制备及其辐照特性研究

张兴 and 王阳元

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2303 Times PDF downloads: 1581 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 June 1999

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1999  >  20(6): 515-519
      张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. 半导体学报(英文版), 1999, 20(6): 515-519.
      Citation:
      张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. 半导体学报(英文版), 1999, 20(6): 515-519.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return