Chin. J. Semicond. > 1999, Volume 20 > Issue 6 > 515-519
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高质量栅氧化层的制备及其辐照特性研究

张兴 and 王阳元

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    Received: 20 August 2015 Revised: Online: Published: 01 June 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(6): 515-519
      张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. 半导体学报(英文版), 1999, 20(6): 515-519.
      Citation:
      张兴, 王阳元. 高质量栅氧化层的制备及其辐照特性研究[J]. 半导体学报(英文版), 1999, 20(6): 515-519.
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      • Received Date: 2015-08-20

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