Chin. J. Semicond. > 2005, Volume 26 > Issue 3 > 472-475
|

CONTENTS

Lattice-Matched InP-Based HEMTs with fT of 120GHz

Chen Liqiang, Zhang Haiying, Yin Junjian, Qian He and and Niu Jiebin

+ Author Affiliations

PDF

Abstract: Lattice-matched InP-based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of －1.2V,and the maximum current density of 500mA/mm.

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2421 Times PDF downloads: 1333 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 2005

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2005  >  26(3): 472-475
      Chen Liqiang, Zhang Haiying, Yin Junjian, Qian He, and Niu Jiebin. Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Journal of Semiconductors, 2005, 26(3): 472-475. ****Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Chin. J. Semicond., 2005, 26(3): 472.
      Citation:
      Chen Liqiang, Zhang Haiying, Yin Junjian, Qian He, and Niu Jiebin. Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Journal of Semiconductors, 2005, 26(3): 472-475. ****
      Lattice-Matched InP-Based HEMTs with fT of 120GHz[J]. Chin. J. Semicond., 2005, 26(3): 472.
      shu

      Lattice-Matched InP-Based HEMTs with fT of 120GHz

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return