Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 197-203
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用于自对准提升硅化物结构的Co/Si/Ti/Si及Co/Si/…Ti/Si多层薄膜固相反应研究

屈新萍 , 茹国平 , 刘建海 , 房华 , 徐鸿涛 and 李炳宗

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Key words: 固相反应, 硅化物, 自对准, 多层薄膜

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 197-203
      屈新萍, 茹国平, 刘建海, 房华, 徐鸿涛, 李炳宗. 用于自对准提升硅化物结构的Co/Si/Ti/Si及Co/Si/…Ti/Si多层薄膜固相反应研究[J]. 半导体学报(英文版), 2000, 21(2): 197-203.
      Citation:
      屈新萍, 茹国平, 刘建海, 房华, 徐鸿涛, 李炳宗. 用于自对准提升硅化物结构的Co/Si/Ti/Si及Co/Si/…Ti/Si多层薄膜固相反应研究[J]. 半导体学报(英文版), 2000, 21(2): 197-203.
      shu

      • Received Date: 2015-08-20

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