Chin. J. Semicond. > 1991, Volume 12 > Issue 6 > 360-366
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1微米自对准CoSi_2 SALICIDE MOS技术研究

徐立 , 武国英 , 张国炳 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(6): 360-366
      徐立, 武国英, 张国炳, 王阳元. 1微米自对准CoSi_2 SALICIDE MOS技术研究[J]. 半导体学报(英文版), 1991, 12(6): 360-366.
      Citation:
      徐立, 武国英, 张国炳, 王阳元. 1微米自对准CoSi_2 SALICIDE MOS技术研究[J]. 半导体学报(英文版), 1991, 12(6): 360-366.
      shu

      • Received Date: 2015-08-19

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