Chin. J. Semicond. > 1991, Volume 12 > Issue 6 > 367-372
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高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响

陶江 , 武国英 , 张国炳 , 陈文茹 and 王阳元

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(6): 367-372
      陶江, 武国英, 张国炳, 陈文茹, 王阳元. 高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响[J]. 半导体学报(英文版), 1991, 12(6): 367-372.
      Citation:
      陶江, 武国英, 张国炳, 陈文茹, 王阳元. 高温工艺对TiSi_2/n~+-Poly-Si复合栅MOS电容特性及TiSi_2膜性质的影响[J]. 半导体学报(英文版), 1991, 12(6): 367-372.
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      • Received Date: 2015-08-19

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