| Citation: |
Zhang Shujing, Yang Ruixia, Gao Xuebang, Yang Kewu. Large Signal Modeling of GaAs HFET/PHEMT[J]. Journal of Semiconductors, 2007, 28(3): 439-443.
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Zhang S J, Yang R X, Gao X B, Yang K W. Large Signal Modeling of GaAs HFET/PHEMT[J]. Chin. J. Semicond., 2007, 28(3): 439.
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Large Signal Modeling of GaAs HFET/PHEMT
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Abstract
The large-signal modeling of a GaAs HFET/PHEMT is the key of designing a microwave integrated power amplifier.Through analyzing the modeling design,calibrating it on-wafer,and applying appropriate measurement techniques,we develop a modified charge conservation EEHEMT1 model.This is accomplished by using modified Cold FET measurement technology and adopting the testing technique on-wafer and combining it with narrow pulse testing technology.The experimental results agree closely with simulated results.-
Keywords:
- GaAs FET,
- MMIC,
- power device model,
- testing structure,
- accurate modeling
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References
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