| Citation: |
Zhang Fasheng, Li Xinran. Mo/Schottky Barrier Diodes on 4H-Silicon Carbide[J]. Journal of Semiconductors, 2007, 28(3): 435-438.
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Zhang F S, Li X R. Mo/Schottky Barrier Diodes on 4H-Silicon Carbide[J]. Chin. J. Semicond., 2007, 28(3): 435.
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Mo/Schottky Barrier Diodes on 4H-Silicon Carbide
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Abstract
With microelectronics plane technology,RF sputtering was used to deposit Mo to form a Schottky contact and electron beam evaporation was used to deposit Ni to form an ohmic contact in high vacuum ambient,and Mo/4H-SiC Schottky-barrier diodes were made in structures containing three-FLR.High-temperature annealing for the Mo contact is found to be effective in controlling the Schottky-barrier height at 1.2～1.3eV without degradation of the n-factor and reverse characteristics.A breakdown voltage of 3kV,a specific on resistance of 9.2mΩ·cm2, and a good V2b／Ron value of 978MW／cm2 for Mo/4H-SiC Schottky-barrier diodes are obtained experimentally.-
Keywords:
- SiC,
- Mo,
- Schottky barrier diode
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References
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Proportional views
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