Chin. J. Semicond. > 2002, Volume 23 > Issue 11 > 1207-1210
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氮化H_2-O_2合成薄栅介质的击穿特性

刘运龙 , 刘新宇 , 韩郑生 , 海潮和 and 钱鹤

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Key words: 氮化H2-O2合成, 零时间击穿, 时变击穿

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    Received: 19 August 2015 Revised: Online: Published: 01 November 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(11): 1207-1210
      刘运龙, 刘新宇, 韩郑生, 海潮和, 钱鹤. 氮化H_2-O_2合成薄栅介质的击穿特性[J]. 半导体学报(英文版), 2002, 23(11): 1207-1210.
      Citation:
      刘运龙, 刘新宇, 韩郑生, 海潮和, 钱鹤. 氮化H_2-O_2合成薄栅介质的击穿特性[J]. 半导体学报(英文版), 2002, 23(11): 1207-1210.
      shu

      • Received Date: 2015-08-19

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