Chin. J. Semicond. > 2000, Volume 21 > Issue 2 > 174-178
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CMOS SRAM单粒子翻转效应的解析分析

贺朝会 , 李国政 , 罗晋生 and 刘恩科

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Key words: CMOSSRAM, 单粒子翻转, 临界电荷, 恢复时间, 反馈时间

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    Received: 20 August 2015 Revised: Online: Published: 01 February 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(2): 174-178
      贺朝会, 李国政, 罗晋生, 刘恩科. CMOS SRAM单粒子翻转效应的解析分析[J]. 半导体学报(英文版), 2000, 21(2): 174-178.
      Citation:
      贺朝会, 李国政, 罗晋生, 刘恩科. CMOS SRAM单粒子翻转效应的解析分析[J]. 半导体学报(英文版), 2000, 21(2): 174-178.
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      • Received Date: 2015-08-20

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