Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 65-69
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Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203

Xue Yuzhi and Martin A Green

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Abstract: Al/Al203 multilayers with nanometer scale are fabricated by thermal evaporation and natural oxidization techniques. The detection of X-ray and photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) is performed, and the curve ofei (ki ) is got. The properties of the negative resistance for the multilayers are found.

Key words: multilayers ofal/Al203 ,  electron spectroscopy,  electronic properties

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(S1): 65-69
      Xue Yuzhi, Martin A Green. Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203[J]. Journal of Semiconductors, 2003, 24(S1): 65-69. ****Xue Y Z, Martin A G. Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203[J]. Chin. J. Semicond., 2003, 24(S1): 65.
      Citation:
      Xue Yuzhi, Martin A Green. Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203[J]. Journal of Semiconductors, 2003, 24(S1): 65-69. ****
      Xue Y Z, Martin A G. Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203[J]. Chin. J. Semicond., 2003, 24(S1): 65.
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      Optical Electron Spectroscopy and Electronic Properties for Multilayers ofal/Al203

      • Dalian Railway lnstitute, Dalian 116028, China and Photovoltaics Special Research Centre of new South Wales, new South Wales, Australia

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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