Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 667-672
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硅、锗和氩离子注入富硅二氧化硅的电致发光

王艳兵 , 孙永科 , 乔永平 , 张伯蕊 , 秦国刚 , 陈文台 , 龚义元 , 吴德馨 , 马振昌 and 宗婉华

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Key words: 硅基发光, 电致发光, 发光中心, 纳米硅(锗), 量子限制, 离子注入

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 667-672
      王艳兵, 孙永科, 乔永平, 张伯蕊, 秦国刚, 陈文台, 龚义元, 吴德馨, 马振昌, 宗婉华. 硅、锗和氩离子注入富硅二氧化硅的电致发光[J]. 半导体学报(英文版), 2000, 21(7): 667-672.
      Citation:
      王艳兵, 孙永科, 乔永平, 张伯蕊, 秦国刚, 陈文台, 龚义元, 吴德馨, 马振昌, 宗婉华. 硅、锗和氩离子注入富硅二氧化硅的电致发光[J]. 半导体学报(英文版), 2000, 21(7): 667-672.
      shu

      • Received Date: 2015-08-20

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