Chin. J. Semicond. > 2000, Volume 21 > Issue 7 > 673-676
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在硅衬底上用HFCVD法生长的纳米SiC薄膜及其室温光致发光

余明斌 , 马剑平 , 罗家骏 and 陈治明

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Key words: 纳米材料, 碳化硅, 薄膜, 光致发光

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(7): 673-676
      余明斌, 马剑平, 罗家骏, 陈治明. 在硅衬底上用HFCVD法生长的纳米SiC薄膜及其室温光致发光[J]. 半导体学报(英文版), 2000, 21(7): 673-676.
      Citation:
      余明斌, 马剑平, 罗家骏, 陈治明. 在硅衬底上用HFCVD法生长的纳米SiC薄膜及其室温光致发光[J]. 半导体学报(英文版), 2000, 21(7): 673-676.
      shu

      • Received Date: 2015-08-20

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