Chin. J. Semicond. > 1990, Volume 11 > Issue 4 > 279-287
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n~+-i-n~+结构的电极附近结区电场对SCLC法确定薄a—Si:H膜隙态密度的影响──计算机模拟分析

林鸿生 and 林臻

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(4): 279-287
      林鸿生, 林臻. n~+-i-n~+结构的电极附近结区电场对SCLC法确定薄a—Si:H膜隙态密度的影响──计算机模拟分析[J]. 半导体学报(英文版), 1990, 11(4): 279-287.
      Citation:
      林鸿生, 林臻. n~+-i-n~+结构的电极附近结区电场对SCLC法确定薄a—Si:H膜隙态密度的影响──计算机模拟分析[J]. 半导体学报(英文版), 1990, 11(4): 279-287.
      shu

      • Received Date: 2015-08-19

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