Chin. J. Semicond. > 1990, Volume 11 > Issue 4 > 270-278
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应变层多量子阱InGaAs—GaAs的光电流谱研究

方晓明 , 沈学础 , 侯宏启 , 冯巍 and 周钧铭

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1990

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      Article Navigation >  Journal of Semiconductors  > 1990  >  11(4): 270-278
      方晓明, 沈学础, 侯宏启, 冯巍, 周钧铭. 应变层多量子阱InGaAs—GaAs的光电流谱研究[J]. 半导体学报(英文版), 1990, 11(4): 270-278.
      Citation:
      方晓明, 沈学础, 侯宏启, 冯巍, 周钧铭. 应变层多量子阱InGaAs—GaAs的光电流谱研究[J]. 半导体学报(英文版), 1990, 11(4): 270-278.
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      • Received Date: 2015-08-19

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