Chin. J. Semicond. > 2002, Volume 23 > Issue 2 > 143-148
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铟镓氮薄膜的光电特性

韩培德 , 刘祥林 , 王晓晖 , 袁海荣 , 陈振 , 李昱峰 , 陆沅 , 汪度 , 陆大成 and 王占国

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Key words: InGaN, MOVPE, PL

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(2): 143-148
      韩培德, 刘祥林, 王晓晖, 袁海荣, 陈振, 李昱峰, 陆沅, 汪度, 陆大成, 王占国. 铟镓氮薄膜的光电特性[J]. 半导体学报(英文版), 2002, 23(2): 143-148.
      Citation:
      韩培德, 刘祥林, 王晓晖, 袁海荣, 陈振, 李昱峰, 陆沅, 汪度, 陆大成, 王占国. 铟镓氮薄膜的光电特性[J]. 半导体学报(英文版), 2002, 23(2): 143-148.
      shu

      • Received Date: 2015-08-19

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