| Citation: |
SUN Yuan-ping, ZHANG Ze-hong, ZHAO De-gang, FENG Zhi-hong, FU Yi, ZHANG Shu-ming, YANG Hui. Design of High Brightness Cubic-GaN LED Grown on GaAs Substrate[J]. Journal of Semiconductors, 2002, 23(9): 1001-1005.
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SUN Yuan-ping, ZHANG Ze-hong, ZHAO De-gang, FENG Zhi-hong, FU Yi, ZHANG Shu-ming, YANG Hui. 2002: Design of High Brightness Cubic-GaN LED Grown on GaAs Substrate. Journal of Semiconductors, 23(9): 1001-1005.
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Design of High Brightness Cubic-GaN LED Grown on GaAs Substrate
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Abstract
The feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by using wafer bonding technique is calculated by the principles of optical thin films. The light extraction efficiency can be improved by 2.65 times when a thin Ni layer is used as an adhesive layer and Ag layer as a reflective layer. Experimental results show that the reflectivity at 459.2 nm of the bonded samples is improved by 2.4 times than the as grown samples.
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Keywords:
- cubic GaN,
- wafer bonding,
- design process
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References
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Proportional views
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