Chin. J. Semicond. > 2000, Volume 21 > Issue 12 > 1203-1207
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MFIS结构的C-V特性

颜雷 , 汤庭鳌 , 黄维宁 , 姜国宝 , 钟琪 and 汤祥云

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Key words: 不挥发非破坏性读出铁电存储器, 存储窗口, 铁电薄膜, 电滞回线

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(12): 1203-1207
      颜雷, 汤庭鳌, 黄维宁, 姜国宝, 钟琪, 汤祥云. MFIS结构的C-V特性[J]. 半导体学报(英文版), 2000, 21(12): 1203-1207.
      Citation:
      颜雷, 汤庭鳌, 黄维宁, 姜国宝, 钟琪, 汤祥云. MFIS结构的C-V特性[J]. 半导体学报(英文版), 2000, 21(12): 1203-1207.
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      • Received Date: 2015-08-20

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