Chin. J. Semicond. > 1985, Volume 6 > Issue 1 > 11-18
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离子注入CO_2激光退火硅中的深能级缺陷

鲍希茂 , 张新宇 and 柳承恩

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    Received: 20 August 2015 Revised: Online: Published: 01 January 1985

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      Article Navigation >  Journal of Semiconductors  > 1985  >  6(1): 11-18
      鲍希茂, 张新宇, 柳承恩. 离子注入CO_2激光退火硅中的深能级缺陷[J]. 半导体学报(英文版), 1985, 6(1): 11-18.
      Citation:
      鲍希茂, 张新宇, 柳承恩. 离子注入CO_2激光退火硅中的深能级缺陷[J]. 半导体学报(英文版), 1985, 6(1): 11-18.
      shu

      • Received Date: 2015-08-20

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