Chin. J. Semicond. > 2004, Volume 25 > Issue 6 > 691-696
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半绝缘GaAs光电导开关的击穿特性

施卫 and 田立强

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Key words: 砷化镓, 光电导开关, 击穿机理

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(6): 691-696
      施卫, 田立强. 半绝缘GaAs光电导开关的击穿特性[J]. 半导体学报(英文版), 2004, 25(6): 691-696.
      Citation:
      施卫, 田立强. 半绝缘GaAs光电导开关的击穿特性[J]. 半导体学报(英文版), 2004, 25(6): 691-696.
      shu

      • Received Date: 2015-08-19

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