| Citation: |
Wu Yuehua, Li Zhiguo, Liu Zhimin, Ji Yuan, Hu Xiuzhen, Liao Jingning. Relationship Between Annealing Temperature and Thermal Stress[J]. Journal of Semiconductors, 2006, 27(S1): 403-406.
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Wu Y H, Li Z G, Liu Z M, Ji Y, Hu X Z, Liao J N. Relationship Between Annealing Temperature and Thermal Stress[J]. Chin. J. Semicond., 2006, 27(13): 403.
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Relationship Between Annealing Temperature and Thermal Stress
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Abstract
The residual strains and stresses of 1μm/0.5μm aluminum interconnects are observed by using two dimension XRD.The tensile stress of the deposited interconnects decreases with increasing interconnect width.The longitudinal stress is obvious lager than transverse stress.Stresses in every directions decrease after 2.5h annealing.The decreasing amplitude of 1μm-aluminum is much lager than that of 0.5μm.The image quality (IQ) of Kikuch is carried out by using EBSD fore-and-aft annealing.The result reveals that lattice distortion decreases by annealing,and the stress is released.-
Keywords:
- residual stress,
- annealing temperature,
- two-dimension XRD,
- EBSD,
- IQ
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References
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Proportional views
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