Chin. J. Semicond. > 1991, Volume 12 > Issue 12 > 721-727
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LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响

陈克铭 , 李国花 , 吕惠云 and 陈朗星

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(12): 721-727
      陈克铭, 李国花, 吕惠云, 陈朗星. LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响[J]. 半导体学报(英文版), 1991, 12(12): 721-727.
      Citation:
      陈克铭, 李国花, 吕惠云, 陈朗星. LPCVD氮化硅膜中的氢含量及其对pH-ISFET敏感特性的影响[J]. 半导体学报(英文版), 1991, 12(12): 721-727.
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      • Received Date: 2015-08-19

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