| Citation: |
Wang Hui, Guo Xia, Liang Ting, Liu Shiwen, Gao Guo, Shen Guangdi. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Journal of Semiconductors, 2006, 27(6): 1042-1045.
****
Wang H, Guo X, Liang T, Liu S W, Gao G, Shen G D. GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment[J]. Chin. J. Semicond., 2006, 27(6): 1042.
|
GaAs/GaN Direct Wafer Bonding Based on Hydrophilic Surface Treatment
-
Abstract
GaAs and GaN wafer pairs are successfully bonded based on the hydrophilic surface treatment.The bonding is carried out at 500℃ in N2 atmosphere for 10min.It is found that a large fraction of the interface area is well bonded.SEM results indicate that there is no air gap at the bonding interface.PL measurements indicate that the crystal structure is slightly affected by the wafer bonding process.Visible light transmission measurements indicate that the GaAs/GaN bonded interface is translucent.Success in GaAs/GaN direct wafer bonding has great implications for the integration of GaAs and GaN semiconductor materials.-
Keywords:
- directly wafer bonding,
- GaAs,
- GaN,
- optoelectronic integration
-
References
-
Proportional views
DownLoad: