| Citation: |
Zhao Liwei, Liu Caichi, Teng Xiaoyun, Hao Qiuyan, Zhu Junshan, Sun Shilong, Wang Haiyun, Xu Yuesheng, Feng Yuchun, Guo Baoping. Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon[J]. Journal of Semiconductors, 2006, 27(6): 1046-1050.
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Zhao L W, Liu C C, Teng X Y, Hao Q Y, Zhu J S, Sun S L, Wang H Y, Xu Y S, Feng Y C, Guo B P. Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon[J]. Chin. J. Semicond., 2006, 27(6): 1046.
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Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon
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Abstract
A new method for the light-assisted wet etching of GaN is demonstrated,the light source for which is a tungsten halide lamp.The dislocation density and surface morphology are investigated by scanning electron microscopy and atomic force microscopy,and an optimal etching morphology is obtained.It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites.Many hexagonal etching pits,which emergence at the dislocations,are observed.The etching mechanism is discussed,and an optimal etching condition is proposed.-
Keywords:
- GaN,
- wet etching,
- hexagonal etching pits
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References
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Proportional views
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