An SIT-BJT Operation Model for SITh in the Blocking State

Yang Jianhong; Wang Zaixing; Li Siyuan

J. Semicond. > 2008, Volume 29 > Issue 4 > 645-649

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An SIT-BJT Operation Model for SITh in the Blocking State

Yang Jianhong, Wang Zaixing and Li Siyuan

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Abstract: A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state.On the basis of the physical mechanism,this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters.The model is verified by numerical simulation and theoretical analysis.Based on the model,the variations of the electrical parameters such as the potential barrier,the anode junction voltage drop,and the current amplification factor are studied and discussed.

Key words: static induction thyristor, SIT-BJT model, current amplification factor

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Yang Jianhong, Wang Zaixing, Li Siyuan. An SIT-BJT Operation Model for SITh in the Blocking State[J]. Journal of Semiconductors, 2008, 29(4): 645-649.

Yang J H, Wang Z X, Li S Y. An SIT-BJT Operation Model for SITh in the Blocking State[J]. J. Semicond., 2008, 29(4): 645.

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Received: 18 August 2015 Revised: 30 November 2007 Online: Published: 01 April 2008

A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state.On the basis of the physical mechanism,this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters.The model is verified by numerical simulation and theoretical analysis.Based on the model,the variations of the electrical parameters such as the potential barrier,the anode junction voltage drop,and the current amplification factor are studied and discussed.

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