Abstract: An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated.A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer.This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility,reduces the threshold voltage,and improves the on/off ratio simultaneously.The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage.Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.

Key words: organic thin film transistor, modified electrode, bilayer insulator, mobility