Chin. J. Semicond. > 1987, Volume 8 > Issue 5 > 545-547
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B~+和P~+离子注入在n-Si中产生缺陷能级的进一步研究

孙璟兰 , 陈建新 and 李名复

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    Received: 19 August 2015 Revised: Online: Published: 01 May 1987

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      Article Navigation >  Journal of Semiconductors  > 1987  >  8(5): 545-547
      孙璟兰, 陈建新, 李名复. B~+和P~+离子注入在n-Si中产生缺陷能级的进一步研究[J]. 半导体学报(英文版), 1987, 8(5): 545-547.
      Citation:
      孙璟兰, 陈建新, 李名复. B~+和P~+离子注入在n-Si中产生缺陷能级的进一步研究[J]. 半导体学报(英文版), 1987, 8(5): 545-547.
      shu

      • Received Date: 2015-08-19

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