| Citation: |
Xie Changqing, Liu Ming, Chen Baoqin, Ye Tianchun. Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask[J]. Journal of Semiconductors, 2006, 27(S1): 340-342.
****
Xie C Q, Liu M, Chen B Q, Ye T C. Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask[J]. Chin. J. Semicond., 2006, 27(13): 340.
|
Application on Sidewall Chrome Attenuated NewStructure Phase Shift Mask
-
Abstract
A new type phase shift mask--sidewall chrome attenuated phase shift mask(SCAPSM) is presented.Compared to conventional attenuated phase shift mask,only two process steps are added,but its lithography resolution can be improved greatly.With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E,the SCAPSM exposure process is studied using optical lithography simulation software PROLITH.The resolution of dry 193nm optical lithography can be improved to 50nm when using SCAPSM+OAI. -
References
-
Proportional views
DownLoad: