Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1865-1870

X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD

Wang Xiaoliang , Liu Xinyu , Hu Guoxin , Wang Junxi , Ma Zhiyong , Wang Cuimei , Li Jianping , Ran Junxue , Zheng Yingkui , Qian He and Zeng Y

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Key words: AlGaN/GaN, HEMT, MOCVD, power device

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Received: 19 August 2015 Revised: Online: Published: 01 October 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(10): 1865-1870

Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.

Citation:

Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.

Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.

Citation:

Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.

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