Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1865-1870

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Key words: AlGaN/GaN HEMT MOCVD power device

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.
      Citation:
      Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.

      • Received Date: 2015-08-19

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