Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.
Citation:
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Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.
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Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.
Citation:
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Wang Xiaoliang, Liu Xinyu, Hu Guoxin, Wang Junxi, Ma Zhiyong, Wang Cuimei, Li Jianping, Ran Junxue, Zheng Yingkui, Qian He, Zeng Y. X-Band GaN Power HEMTs with Power Density of 2.23W/mm Grown on Sapphire by MOCVD[J]. 半导体学报(英文版), 2005, 26(10): 1865-1870.
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