A DBRTD with a High PVCR and a Peak Current Density at Room Temperature

Yili Chengrong , Xie Changqing , Wang Congshun , Liu Ming and and Ye Tianchun

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Key words: resonant tunneling diode, peak-to-valley current ratio, peak current density

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Received: 19 August 2015 Revised: Online: Published: 01 October 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(10): 1871-1874

Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, and Ye Tianchun. A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J]. 半导体学报(英文版), 2005, 26(10): 1871-1874.

Citation:

Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, and Ye Tianchun. A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J]. 半导体学报(英文版), 2005, 26(10): 1871-1874.

Yili Chengrong, Xie Changqing, Wang Congshun, Liu Ming, and Ye Tianchun. A DBRTD with a High PVCR and a Peak Current Density at Room Temperature[J]. 半导体学报(英文版), 2005, 26(10): 1871-1874.

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