Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1875-1880

Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation

Wu Junfeng , Zhong Xinghua , Li Duoli , Bi Jinshun and and Hai Chaohe

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Key words: PDSOI, HBC, breakdown, kink effect

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Received: 19 August 2015 Revised: Online: Published: 01 October 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(10): 1875-1880

Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe. Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation[J]. 半导体学报(英文版), 2005, 26(10): 1875-1880.

Citation:

Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe. Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation[J]. 半导体学报(英文版), 2005, 26(10): 1875-1880.

Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe. Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation[J]. 半导体学报(英文版), 2005, 26(10): 1875-1880.

Citation:

Wu Junfeng, Zhong Xinghua, Li Duoli, Bi Jinshun, and Hai Chaohe. Improved Breakdown Voltage of Partially Depleted SOI nMOSFETs with Half-Back-Channel Implantation[J]. 半导体学报(英文版), 2005, 26(10): 1875-1880.

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