Chin. J. Semicond. > 2002, Volume 23 > Issue 10 > 1009-1014

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高k栅介质MOSFET的栅电流模型(英文)

刘晓彦 , 康晋锋 and 韩汝琦

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Key words: MOSFET, 直接隧穿, 栅电流, 高k栅介质

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(10): 1009-1014
      刘晓彦, 康晋锋, 韩汝琦. 高k栅介质MOSFET的栅电流模型(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1009-1014.
      Citation:
      刘晓彦, 康晋锋, 韩汝琦. 高k栅介质MOSFET的栅电流模型(英文)[J]. 半导体学报(英文版), 2002, 23(10): 1009-1014.
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      • Received Date: 2015-08-19

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