| Citation: |
Xu Jian, Ding Lei, Han Zhengsheng, Zhong Chuanjie. Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos[J]. Journal of Semiconductors, 2008, 29(3): 559-562.
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Xu J, Ding L, Han Z S, Zhong C J. Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos[J]. J. Semicond., 2008, 29(3): 559.
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Impact of Two-Dimension Effects on Threshold Voltage of Fully Depleted SOI MOSFETs with Asymmetric Halos
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Abstract
Based on an analytical threshold voltage model of fully depleted silicon-on-insulator (SOI) MOSFETs with asymmetric HALO structures,the impact of the two-dimension effects in a buried-oxide layer on threshold voltage is discussed.Compared to the 1D model,two-dimensional effects in the buried-oxide layer of the deep submicron MOSFET device create the short-channel effect more quickly.The predictions of the new model are in good agreement with those of the two-dimension numerical simulator MEDICI. -
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