Chin. J. Semicond. > 2001, Volume 22 > Issue 9 > 1222-1125
|

CONTENTS

GaAs、AlAs、DBR反应离子刻蚀速率的研究

刘文楷 , 林世鸣 , 武术 , 朱家廉 , 高俊华 , 渠波 , 陆建祖 , 廖奇为 , 邓晖 and 陈弘达

+ Author Affiliations

PDF

Key words: 反应离子刻蚀, 刻蚀速率, GaAs, AlAs, DBR

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2769 Times PDF downloads: 1334 Times Cited by: 0 Times

    History

    Received: 20 August 2015 Revised: Online: Published: 01 September 2001

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2001  >  22(9): 1222-1125
      刘文楷, 林世鸣, 武术, 朱家廉, 高俊华, 渠波, 陆建祖, 廖奇为, 邓晖, 陈弘达. GaAs、AlAs、DBR反应离子刻蚀速率的研究[J]. 半导体学报(英文版), 2001, 22(9): 1222-1125.
      Citation:
      刘文楷, 林世鸣, 武术, 朱家廉, 高俊华, 渠波, 陆建祖, 廖奇为, 邓晖, 陈弘达. GaAs、AlAs、DBR反应离子刻蚀速率的研究[J]. 半导体学报(英文版), 2001, 22(9): 1222-1125.
      shu

      • Received Date: 2015-08-20

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return