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1 |
Analysis and implementation of derivative superposition for a power amplifier driver
Li Yilei, Han Kefeng, Yan Na, Tan Xi, Min Hao, et al.
Journal of Semiconductors, 2012, 33(4): 045002. doi: 10.1088/1674-4926/33/4/045002
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2 |
S-band low noise amplifier using 1 μm InGaAs/InAlAs/InP pHEMT
Z. Hamaizia, N. Sengouga, M. C. E. Yagoub, M. Missous
Journal of Semiconductors, 2012, 33(2): 025001. doi: 10.1088/1674-4926/33/2/025001
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3 |
A 50 MHz–1 GHz high linearity CATV amplifier with a 0.15 μm InGaAs PHEMT process
Xu Jian, Wang Zhigong, Zhang Ying, Huang Jing
Journal of Semiconductors, 2011, 32(7): 075002. doi: 10.1088/1674-4926/32/7/075002
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4 |
A low power and low distortion rail-to-rail input/output amplifier using constant current technique
Liu Yan, Zhao Yiqiang, Zhang Shilin, Zhao Hongliang
Journal of Semiconductors, 2011, 32(4): 045003. doi: 10.1088/1674-4926/32/4/045003
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5 |
A 1.25 Gb/s laser diode driver with pulse width optimization
Wang Huan, Wang Zhigong, Xu Jian, Wang Rong, Miao Peng, et al.
Journal of Semiconductors, 2010, 31(9): 095004. doi: 10.1088/1674-4926/31/9/095004
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6 |
A Ka-band low-noise amplifier with a coplanar waveguide (CPW) structure with 0.15-μm GaAs pHEMT technology
Wu Chia-Song, Chang Chien-Huang, Liu Hsing-Chung, Lin Tah-Yeong, Wu Hsien-Ming, et al.
Journal of Semiconductors, 2010, 31(1): 015005. doi: 10.1088/1674-4926/31/1/015005
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7 |
Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology
Wu Chia-Song, Liu Hsing-Chung
Journal of Semiconductors, 2009, 30(11): 114004. doi: 10.1088/1674-4926/30/11/114004
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8 |
5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end
Zhang Xuelian, Yan Jun, Shi Yin, Dai Fa Foster
Journal of Semiconductors, 2009, 30(1): 015008. doi: 10.1088/1674-4926/30/1/015008
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9 |
10 Gb/s OEIC optical receiver front-end and 3.125 Gb/s PHEMT limiting amplifier
Fan Chao, Chen Tangsheng, Yang Lijie, Feng Ou, Jiao Shilong, et al.
Journal of Semiconductors, 2009, 30(10): 105009. doi: 10.1088/1674-4926/30/10/105009
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10 |
A 10Gb/s GaAs PHEMT High Gain Preamplifier for Optical Receivers
Jiao Shilong, Yang Xianming, Zhao Liang, Li Hui, Chen Zhenlong, et al.
Chinese Journal of Semiconductors , 2007, 28(12): 1902-1911.
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11 |
A Ka-Band PHEMT MMIC 1W Power Amplifier
Yu Mengxia, Li Aibin, Xu Jun
Chinese Journal of Semiconductors , 2007, 28(10): 1513-1517.
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12 |
K-Band Monolithic Low Noise Amplifier with High Gain
Wang Chuang, Qian Rong, Sun Xiaowei
Chinese Journal of Semiconductors , 2006, 27(7): 1285-1289.
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13 |
An Open-Loop Test of a Resonator Fiber Optic Gyro
Zhang Xulin, Ma Huilian, Jin Zhonghe, Ding Chun
Chinese Journal of Semiconductors , 2006, 27(4): 688-691.
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14 |
A 12-Channel,30Gb/s,0.18μm CMOS Front-End Amplifier for Parallel Optic-Fiber Receivers
Li Zhiqun, Xue Zhaofeng, Wang Zhigong, Feng Jun
Chinese Journal of Semiconductors , 2006, 27(1): 47-53.
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15 |
32GHz MMIC Power Amplifier Using 0.25μm GaAs PHEMT
Gu Jianzhong, Zhang Jian, Yu Xiaojing, Qian Rong, Li Lingyun, et al.
Chinese Journal of Semiconductors , 2006, 27(12): 2160-2162.
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16 |
Analysis and Design of 10Gb/s,0.2μm GaAs PHEMTTrans-Impedance Amplifiers
Cai Shuicheng, Wang Zhigong, Gao Jianjun, Zhu En
Chinese Journal of Semiconductors , 2006, 27(10): 1808-1813.
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17 |
Ku-Band 20W GaAs Power PHEMT
Zhong Shichang, Chen Tangsheng
Chinese Journal of Semiconductors , 2006, 27(10): 1804-1807.
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18 |
An X-Band PHEMT MMIC Power Amplifier
Zhang Shujing, Yang Ruixia, Wu Jibin, Yang Kewu
Chinese Journal of Semiconductors , 2006, 27(10): 1800-1803.
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19 |
A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator by a Combined Method of SAG and QWI
Zhang Jing, Li Baoxia, Zhao Lingjuan, Wang Baojun, Zhou Fan, et al.
Chinese Journal of Semiconductors , 2005, 26(11): 2053-2057.
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20 |
30GHz PHEMT Oscillator
Wu Ahui
Chinese Journal of Semiconductors , 2005, 26(S1): 252-255.
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