Chin. J. Semicond. > 2001, Volume 22 > Issue 2 > 228-233
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利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度

毛凌锋 , 谭长华 and 许铭真

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Key words: FN电流, MOS结构, 栅氧化层

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    Received: 19 August 2015 Revised: Online: Published: 01 February 2001

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      Article Navigation >  Journal of Semiconductors  > 2001  >  22(2): 228-233
      毛凌锋, 谭长华, 许铭真. 利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度[J]. 半导体学报(英文版), 2001, 22(2): 228-233.
      Citation:
      毛凌锋, 谭长华, 许铭真. 利用FN电流估计薄栅MOS结构栅氧化层的势垒转变区的宽度[J]. 半导体学报(英文版), 2001, 22(2): 228-233.
      shu

      • Received Date: 2015-08-19

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