Chin. J. Semicond. > 2004, Volume 25 > Issue 3 > 247-251
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双平面掺杂和单平面掺杂PHEMT器件的性能比较(英文)

陈震 , 郑英奎 , 刘新宇 , 和致经 and 吴德馨

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Key words: 赝配高电子迁移率晶体管(PHEMT), 平面掺杂, 线性度

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    Received: 19 August 2015 Revised: Online: Published: 01 March 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(3): 247-251
      陈震, 郑英奎, 刘新宇, 和致经, 吴德馨. 双平面掺杂和单平面掺杂PHEMT器件的性能比较(英文)[J]. 半导体学报(英文版), 2004, 25(3): 247-251.
      Citation:
      陈震, 郑英奎, 刘新宇, 和致经, 吴德馨. 双平面掺杂和单平面掺杂PHEMT器件的性能比较(英文)[J]. 半导体学报(英文版), 2004, 25(3): 247-251.
      shu

      • Received Date: 2015-08-19

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