Chin. J. Semicond. > 2004, Volume 25 > Issue 9 > 1061-1065
|

CONTENTS

部分耗尽0.25μmSOI射频nMOSFET(英文)

李俊峰 , 杨荣 , 赵玉印 , 柴淑敏 , 刘明 , 徐秋霞 and 钱鹤

+ Author Affiliations

PDF

Key words: 结构, 工艺, 仿真, 实验, 射频, SOI

    • Search

    Advanced Search >>

    GET CITATION

    黄永箴, 陈沁, 国伟华, 于丽娟. Padé近似在光子晶体模拟中的应用（英文）[J]. 半导体学报(英文版), 2005, 26(7): 1281-1286.
    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2354 Times PDF downloads: 829 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 September 2004

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2004  >  25(9): 1061-1065
      黄永箴, 陈沁, 国伟华, 于丽娟. Padé近似在光子晶体模拟中的应用（英文）[J]. 半导体学报(英文版), 2005, 26(7): 1281-1286.
      Citation:
      李俊峰, 杨荣, 赵玉印, 柴淑敏, 刘明, 徐秋霞, 钱鹤. 部分耗尽0.25μmSOI射频nMOSFET(英文)[J]. 半导体学报(英文版), 2004, 25(9): 1061-1065.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return